| 摘要 |
PROBLEM TO BE SOLVED: To provide fluorene organic semiconductor material which shows superior transistor property and which does not require a special manufacturing method or special transistor structure. SOLUTION: The problem is solved by a thin film transistor device being fluorene oligomer in which a semiconductor layer has the molecule amount of under 2000 and which is constituted of one to ten fluorene ring units. Oligomer is deposited by simple vapor deposition and a desired semiconductor characteristic such as high mobility can be obtained, for example.
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