FLASH MEMORY AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To improve deletion speed by a comparatively simple method modifying a mask shape for resist patterning during a manufacturing process. SOLUTION: The memory cell 101 of a flash memory is provided with a p type substrate 103 having an n type source 102 area and a drain 3 area separated and formed so as to form a channel area on a main face and a gate electrode part 108 comprising a first polysilicon layer 105 formed through a silicon oxidation film 104 on a channel area and a second polysilicon layer 107 formed through an ONO film 106 on a floating gate. The side of the area side of the source 102 of the gate electrode part 108 on the channel area is arc-shaped protruded to the area side of the drain.