| 发明名称 |
METHOD FOR MANUFACTURING FUSIBLE LINKS IN A SEMICONDUCTOR DEVICE |
| 摘要 |
<p>In order to form a cavity for a fusible link in a semiconductor device, an etchable material is applied over and around a portion of the fusible link and the etchable material is coated with a protection layer. The access abutting the etchable material is formed through the protection layer. After the removal of the etchable material, the access is partially filled with a refilling material to thereby form the cavity.</p> |
| 申请公布号 |
WO0118863(A9) |
申请公布日期 |
2002.11.07 |
| 申请号 |
WO2000US24402 |
申请日期 |
2000.09.06 |
| 申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRINTZINGER, AXEL;GAMBINO, JEFFREY;RUPP, THOMAS;HALLE, SCOTT |
| 分类号 |
H01L23/525;(IPC1-7):H01L23/525 |
主分类号 |
H01L23/525 |
| 代理机构 |
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