发明名称 |
METHOD FOR PRODUCING HIGH-SPEED VERTICAL NPN BIPOLAR TRANSISTORS AND COMPLEMENTARY MOS TRANSISTORS ON A CHIP |
摘要 |
The invention relates to a method for producing high-speed vertical npn bipolar transistors and complementary MOS transistors on a chip. In order to produce these high-speed vertical npn bipolar transistors and complementary MOS transistors on a chip, all technological method steps for producing the vertical structure of the collector, base and emitter in the active region of the npn bipolar transistors as well as for laterally structuring the collector regions, base regions and emitter regions are performed before the troughs and the gate insulating layer for the MOS transistors are produced. |
申请公布号 |
WO0247160(A3) |
申请公布日期 |
2002.11.07 |
申请号 |
WO2001EP14319 |
申请日期 |
2001.12.06 |
申请人 |
IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / INSTITUT FUER INNOVATIVE MIKROELEKTRONIK;KNOLL, DIETER;HEINEMANN, BERND |
发明人 |
KNOLL, DIETER;HEINEMANN, BERND |
分类号 |
H01L21/331;H01L21/8222;H01L21/8248;H01L21/8249;H01L27/06;H01L29/737 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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