| 摘要 |
PURPOSE: A reference voltage generator in a ferroelectric memory device is provided, which can improve a yield, by connecting two reference cells to one bit line bar. CONSTITUTION: The reference voltage generator of a ferroelectric memory device comprises a bit line bar, and the first and the second reference word line(RWL_H,RWL_L), and the first and the second reference cell plate(RCP_H,RCP_L) where a voltage 0.2 or 0.8 times as high as a cell plate voltage. And the first reference cell(41) is connected to the bit line bar and its another side is connected to the first reference cell plate, and the first reference cell always has data of the first level. And one side of the second reference cell(42) is connected to the bit line bar in common with the first reference cell, and another side of the second reference cell is connected to the second reference cell plate, and the second reference cell always has data of the second level.
|
