发明名称 GLASS SUBSTRATE AND METHOD FOR FLATTENING GLASS SUBSTRATE
摘要 <p>PROBLEM TO BE SOLVED: To provide a glass substrate having high flatness, particularly a glass substrate having 0.04-1.3 nm flatness per 1 cm<2> surface area as a silica glass substrate for a photomask used in a photolithographic process important to the production of IC, or the like, a silica glass substrate whose utilization is expected in the fields of microelectronics, microanalysis, or the like, a silica glass chip, or the like. SOLUTION: The surface of a glass substrate is subjected to local plasma etching to obtain the objective surface-flattened glass substrate.</p>
申请公布号 JP2002316835(A) 申请公布日期 2002.10.31
申请号 JP20010122369 申请日期 2001.04.20
申请人 SHIN ETSU CHEM CO LTD 发明人 TAKEUCHI MASAKI;SHIBANO YUKIO
分类号 C03C15/00;C03C19/00;C03C23/00;G03F1/60;H01L21/027;(IPC1-7):C03C15/00;G03F1/14 主分类号 C03C15/00
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