发明名称 SPUTTERING FILM DEPOSITION SYSTEM
摘要 PROBLEM TO BE SOLVED: To deposit a film having high orientation on a substrate by controlling the energy of sputtering particles. SOLUTION: Plasma beams PB from a plasma gun main body 30 are guided to a magnetic field fixed by a steering coil 40 or the like to form high density plasma in a space over a gun anode 51 and a sputtering target 52. The plasma is kept to be in high density by lines of magnetic force and lines of electric force formed in the vicinity of the surface of the sputtering target 52. Almost of the film deposition particles produced by making Ar ion in the plasma incident to the sputtering target 52 are ionized by the plasma in the space over the sputtering target 52 to be made incident to the surface of a work W and then a highly oriented film free from damage is deposited on the work W by controlling the potential of the surface of the work W.
申请公布号 JP2002317264(A) 申请公布日期 2002.10.31
申请号 JP20010118057 申请日期 2001.04.17
申请人 SUMITOMO HEAVY IND LTD 发明人 MASUI ARATA
分类号 C23C14/32;H01L21/203;(IPC1-7):C23C14/32;//H01L21/2 主分类号 C23C14/32
代理机构 代理人
主权项
地址
您可能感兴趣的专利