发明名称 MAGNETIC MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain full memory performance when a memory cell is constituted to supply a folded current, and to simplify the manufacturing process. SOLUTION: One end of writing wirings for applying a magnetic field from a perpendicular direction of a film surface to the memory cell made of a perpendicularly magnetized film, is connected to adjacent writing wiring via the memory cell. A current is supplied to the writing wirings disposed, so as to sandwich an arbitrary memory cell column and, current value necessary for inverting the magnetizing direction of the memory layer of the memory cell is reduced, as compared with the case that the current is supplied in reverse to the writing wirings separately via the memory cell column. A writing word line is used partly commonly, so that the scale of a drive circuit is decreased.
申请公布号 JP2002319662(A) 申请公布日期 2002.10.31
申请号 JP20010122719 申请日期 2001.04.20
申请人 CANON INC 发明人 SEKIGUCHI YOSHINOBU;INUI FUMIHIRO
分类号 G11C11/14;G11C11/15;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):H01L27/105 主分类号 G11C11/14
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