发明名称 |
Dark field trench in an alternating phase shift mask to avoid phase conflict |
摘要 |
A photoresist mask used in the fabrication of an integrated circuit is described. This mask can include a first portion having a phase characteristic; a second portion being located proximate the first portion and having the same phase characteristic as the first portion; and a segment disposed between the first portion and the second portion to prevent phase conflict between the first portion and the second portion.
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申请公布号 |
US2002160275(A1) |
申请公布日期 |
2002.10.31 |
申请号 |
US20010844015 |
申请日期 |
2001.04.27 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KIM HUNG-EIL |
分类号 |
G03F1/00;(IPC1-7):G03F9/00;G06F17/50;G03G16/00;G03C5/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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