| 摘要 |
In this disclosure, we present processes of growing SiO2 films over silicon at temperatures as low as room temperature and at pressures as high as 1 atmosphere. The lower temperature oxidation was made possible by creation of oxygen atoms and radicals by adding noble gas(es) along with oxidizing gas(es) and applying RF power to create plasma. It was also possible to fabricate silicon nitride films by flowing nitrogen containing gas(es) with noble gas(es) and applying RF power to create plasma at pressures as high as one atmosphere. In addition, the above processes could also be carried out using microwave power instead of RF power to create plasma.
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