发明名称 |
Semiconductor memory device including memory cell portion and peripheral circuit portion |
摘要 |
<p>A semiconductor memory device includes a first magneto resistive element (11) disposed in a memory cell portion (10), a first circuit disposed in the memory cell portion (10), the first circuit writing data into the first magneto resistive element (11) or reading out data from the first magneto resistive element (11), and at least a portion of a second circuit disposed in a region below the memory cell portion (10).</p> |
申请公布号 |
EP1253652(A2) |
申请公布日期 |
2002.10.30 |
申请号 |
EP20020006698 |
申请日期 |
2002.03.27 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HOSOTANI, KEIJI;SUNOUCHI, KAZUMASA |
分类号 |
G11C11/14;H01L43/08;G11C11/15;H01L21/8246;H01L27/02;H01L27/06;H01L27/10;H01L27/105;H01L27/22;(IPC1-7):H01L43/08 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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