发明名称 Semiconductor device with bumps for pads
摘要 A conductive electrode pad is formed on a partial area of an insulating surface. An insulating film covers the electrode pad. The insulating film has an opening exposing at least a partial upper surface of the electrode pad. A barrier layer of conductive material is formed on the partial upper surface exposed on the bottom of the opening and on the surface of the insulating film near the opening. A conductive bump is adhered to the barrier layer. A step is formed on the surface of a layer under the barrier layer between an outer periphery of the barrier layer and an outer periphery of the opening.
申请公布号 US6472763(B2) 申请公布日期 2002.10.29
申请号 US20000725146 申请日期 2000.11.29
申请人 FUJITSU LIMITED 发明人 FUKUDA TOMOYUKI;WATANABE EIJI
分类号 H01L21/60;H01L23/485;(IPC1-7):H01L23/48 主分类号 H01L21/60
代理机构 代理人
主权项
地址