发明名称 |
Semiconductor device with bumps for pads |
摘要 |
A conductive electrode pad is formed on a partial area of an insulating surface. An insulating film covers the electrode pad. The insulating film has an opening exposing at least a partial upper surface of the electrode pad. A barrier layer of conductive material is formed on the partial upper surface exposed on the bottom of the opening and on the surface of the insulating film near the opening. A conductive bump is adhered to the barrier layer. A step is formed on the surface of a layer under the barrier layer between an outer periphery of the barrier layer and an outer periphery of the opening.
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申请公布号 |
US6472763(B2) |
申请公布日期 |
2002.10.29 |
申请号 |
US20000725146 |
申请日期 |
2000.11.29 |
申请人 |
FUJITSU LIMITED |
发明人 |
FUKUDA TOMOYUKI;WATANABE EIJI |
分类号 |
H01L21/60;H01L23/485;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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