| 摘要 |
The present invention provides for a high quality Group III-V compound semiconductor, a method of manufacturing the same, and a light emitting element with an excellent emission characteristic which incorporates such a Group III-V compound semiconductor. The Group III-V compound semiconductor has a structure in which a fifth-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula GaaAlbN (a+b=1, 0<=a<=1, 0<=b<=1), a fourth-layer having a lower impurity concentration, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gaa'Alb'N (a'+b'=1, 0<=a'<=1, 0<=b'<=1), and a first-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula InxGayAlzN (x+y+z=1, 0<x<1, 0<y<1, 0<=z<1), a second-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gax'Aly'N (x'+y'=1, 0<x'<=1, 0<=y'<1), and a third-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gax''Aly''N (x''+y''=1, 0<x''<=1, 0<=y''<1), are stacked one atop the other in this order, and in which the first-layer has a thickness in the range between 5 Å and 90 Å.
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