| 发明名称 |
Method of forming an integrated CMOS capacitive pressure sensor |
| 摘要 |
A capacitive pressure sensor (10) utilizes a diaphragm (38) that is formed along with forming gates (56,57) of active devices on the same semiconductor substrate (11).
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| 申请公布号 |
US6472243(B2) |
申请公布日期 |
2002.10.29 |
| 申请号 |
US20000734473 |
申请日期 |
2000.12.11 |
| 申请人 |
MOTOROLA, INC. |
发明人 |
GOGOI BISHNU P.;MONK DAVID J.;ODLE DAVID W.;NEUMANN KEVIN D.;HUGHES, JR. DONALD L.;SCHMIESING JOHN E.;MCNEIL ANDREW C.;AUGUST RICHARD J. |
| 分类号 |
G01L9/00;H01L21/8234;H01L27/06;H01L29/84;(IPC1-7):H01L21/00 |
主分类号 |
G01L9/00 |
| 代理机构 |
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