Method of manufacturing a nitride series III-V group compound semiconductor

摘要

When nitride series III-V group compound semiconductor is manufactured by gas phase growing using starting material for a group III element, ammonia as a starting material for a group V element and hydrogen, the gas phase molar ratio of hydrogen to the total amount of hydrogen and ammonia (H2/(H2+NH3)) is specified to 0.3<(H2/(H2+NH3))<0.7, 0.3<(H2/(H2+NH3))<0.6 or 0.4<(H2/(H2+NH3))<0.5. A nitride series III-V group compound semiconductor can thus be manufactured with less non-emission center and of excellent crystallinity.