| 摘要 |
PROBLEM TO BE SOLVED: To provide a gate overlap type LDD polysilicon TFT. SOLUTION: A gate overlap type LDD polysilicon TFT consists of a transparent insulation substrate 30, a polysilicon layer formed on the transparent insulation substrate and a gate insulation layer 40 formed in the polysilicon layer. The polysilicon layer has a channel region 38, an LDD structure 36 in a periphery of the channel region, and a source/ drain region 34 in a periphery of the LDD structure. A first gate layer 42 is subjected to pattern formation in the gate insulation layer, and is positioned over the channel region. A second gate layer 46 is subjected to pattern formation to the first gate layer and extended to cover a prescribed region of the gate insulation layer 40 and to cover the LDD structure 36.
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