| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polycrystalline semiconductor thin film which has high ON-characteristics with little characteristics variation and high mobility. SOLUTION: Crystallization starts from a plurality of crystal nuclei A, C, D, E, F introduced in an amorphous silicon film in their respective linear directions to grow a plurality of columnar crystals CS approximately oriented in panes. A rod-like domain RC composed of a plurality of columnar crystals CS continues growing while bending or branching and collides against another rod-like domain RC grown from other crystal nucleus, thus completing the growth. Between adjacent rod-like domains RC, a region having substantially the same crystal orientation is formed through which electrons or holes pass to move between both domains RC.</p> |
