Production of a structured metal-containing layer on a semiconductor wafer comprises applying a metal-containing layer and a mask layer on substrate, structuring, depositing protective layer, and polishing

摘要

Production of a structured metal-containing layer on a semiconductor wafer comprises preparing a wafer with a substrate (1); arranging the metal-containing layer (4) on the substrate; arranging a mask layer (5) on the metal-containing layer; structuring the mask layer and the metal-containing layer; depositing a protective layer (6) on the mask layer and on the substrate; and chemical-mechanical polishing the protective layer and the mask layer, in which the protective layer and the mask layer are removed by an electrode and the electrode is exposed. Preferred Features: A barrier layer is applied to the substrate before applying the electrode. The barrier layer contains titanium or titanium nitride, tantalum or tantalum nitride or tantalum silicon nitride, or iridium or iridium oxide. The electrode contains platinum. The protective layer is made from silicon nitride. The mask layer contains silicon oxide.