METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING SELECTIVE EPITAXIAL GROWTH

摘要

PURPOSE: A method for fabricating a semiconductor device using selective epitaxial growth is provided to improve a function of the semiconductor device by growing a single crystalline layer of high quality. CONSTITUTION: A gate insulating layer(12), a gate conductive layer(14), and an insulating capping layer(16) are laminated on a substrate(10) including an isolation layer(11). A gate pattern(18) is formed thereon by performing a patterning process. A spacer(20) is formed at both sides of the gate pattern(18). An oxide layer is removed from a source/drain region by dipping a substrate into a BOE(Buffered Oxide Etchant) solution during 10 to 200 seconds. A crystalline defect layer is exposed from the source/drain region. A contaminant such as particles is removed from the substrate by dipping the substrate having the exposed crystalline defect layer into an SC1 solution. A silicon oxide layer is formed on the substrate by oxidizing the crystalline defect layer. The silicon oxide layer is removed by dipping the substrate into the BOE solution. A single crystalline silicon layer(36) is formed by performing a selective epitaxial growth process.