发明名称 DEVELOPING UNIT
摘要 PROBLEM TO BE SOLVED: To reduce damages to semiconductor wafers, eliminate uneven cleaning, reduce the size of a developing unit, and improve the working efficiency thereof. SOLUTION: A discharge nozzle 122 of a pure water nozzle portion 120 comprises a group of nine small-diameter discharge nozzles (discharge ports), and small-diameter discharge nozzles 122A scatter and discharge pure water to the resist coated face of a semiconductor wafer 130. A developing nozzle portion 110 and the pure water nozzle portion 120 are placed, in parallel with a support arm 100 in-between. The nozzle portions are integrated with each other, and the movement of the nozzle portions is integrally controlled by a single moving mechanism. The developing nozzle portion 110 and the pure water nozzle portion 120 are advanced to a position for processing the semiconductor wafer 130. After cleaning and developing have been performed successively or simultaneously, the developing nozzle portion 110 and the pure water nozzle portion 120 are retreated from the position for processing a semiconductor wafer 130.
申请公布号 JP2002305133(A) 申请公布日期 2002.10.18
申请号 JP20010106994 申请日期 2001.04.05
申请人 SONY CORP 发明人 JINGU TATSUO
分类号 G03F7/30;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/30
代理机构 代理人
主权项
地址