SOLUTION FOR CHEMICAL MECHANICAL POLISHING AND METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a solution for chemical mechanical polishing. SOLUTION: Using a polishing solution containing a polishing compound, deionized water, a pH controlling agent and a polyethylene imine enabines adjustment of a removing ratios of a silicon oxide film and a silicon nitride film, which are simultaneously exposed at the time of CMP polishing of a conductive layer, such as a polysilicon layer. Furthermore, a polishing solution doped with a polyethylene imine and a choline derivative generates a synergistic effect in the decrease in the removing ratios of the silicon oxide film and the silicon nitride film, and the containing amount of the choline derivative is adjusted, to adjust a relative proportion of the removal ratios of the silicon oxide film and the silicon nitride film.