| 摘要 |
An optically-based system and method are disclosed for detecting surface pits and their average depth in a metal film by an examination of pulse shape in a reflected probe beam pulse. Also disclosed is an optically-based system and method for detecting an occurrence of a failure in a CMP process by detecting surface pits in a metal film by an examination of pulse shape in a reflected probe beam pulse. Also disclosed is an optically-based system and method for providing quality indications to a CMP process for enabling control of the CMP process by detecting surface pits in a metal film by an examination of pulse shape in a reflected probe beam pulse, where the pulse shape has a twin peak shape that is indicative of a presence of a surface pit. Control of the CMP process includes controlling at least one of polish pressure, speed, polish pad life and polish slurry composition and chemistry. Also disclosed is an optically-based system and method to enable semiconductor process improvements using an optical metrology system that is suitably programmed to recognize and detect the presence of an abnormal twin or double peak that is indicative of a surface defect (e.g., pitting) in a film (e.g., a metal (Cu) film).
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