发明名称 Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates
摘要 A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.
申请公布号 US6464794(B1) 申请公布日期 2002.10.15
申请号 US19990404631 申请日期 1999.09.23
申请人 发明人
分类号 H01L21/306;C23C16/458;H01J37/32;H01L21/683;(IPC1-7):C23C16/00;H05H1/00 主分类号 H01L21/306
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