发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, CIRCUIT SUBSTRATE AND ELECTRONIC EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a formation method of bumps which correspond to a narrow pitch of a pad, are resistant to electroless plating treatment, have uniform shape and characteristics between pads and improve yield and to provide, a semiconductor device and its manufacturing method, and a circuit substrate and an electronic equipment. SOLUTION: A bump is formed by forming a resist layer 20 above a pad 12, forming a resist layer 24 in the rear and on the side of a substrate where the pad 12 is formed, hardening the resist layer 24 by applying energy 36 which generates bridge reaction to the resist layer 24, patterning the resist layer 20 to provide the resist layer 20 with a through-hole, hardening a surface of the resist layer 20, by applying energy which generates bridge reaction to the resist layer 20 and forming metal layers 40, 42 electrically connected to the pad 12 inside the through-hole 22.
申请公布号 JP2002299363(A) 申请公布日期 2002.10.11
申请号 JP20010097546 申请日期 2001.03.29
申请人 SEIKO EPSON CORP 发明人 YODA TAKESHI
分类号 H01L21/60 主分类号 H01L21/60
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