| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical energizing type magnetoresistive effect element that can obtain a high MR changing rate and MR changing quantity without being out of scaling low even in a CPP-SV element of submicron size, a magnetic head, a magnetic reproducing device and a magnetic storage device to which they are mounted. SOLUTION: A sidewall layer, that is made of highly resistant oxide, nitride, fluoride, boride, sulfide, or carbide having mirror reflection effect with respective to conduction electrons, is provided to the side surface of at least a magnetized adherence layer and a non-magnetic intermediate layer in a magnetoresistance effect film, thus preventing inelastic scattering of electrons or loss of spin information on the side surface of the magnetoresistance effect film. Furthermore, branching of sense current can be also prevented. |
