NEGATIVE RESISTANCE FIELD EFFECT ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a negative resistance field effect element, capable of developing negative characteristics by a low power source voltage (low drain voltage) and taking a high PVCR. SOLUTION: An InAlAs barrier layer 12 having a trench TR of opposed one side face of a plane A (111) and another side face of a plane B (331) is formed on an InP substrate 11 having an asymmetrical V-groove of one side face of a plane (100) and another side face of a plane (011). An InGaAs quantum wire 13 having a relatively narrow energy band gap as a high mobility channel is formed at the bottom of the trench. An InAlAs modulation-doped layer 20 having a relatively wide energy band gap as a low mobility channel is formed thereon. A source electrode 42 and a drain electrode 43 isolated from each other along a length direction of the quantum wire 13 electrically conducted with the high mobility channel via a contact layer 30, and a gate electrode 41 opposed to the channel 20 via a Schottky junction interposed via an insulating layer between the electrode 42 and the electrode 43 are provided.