| 摘要 |
PURPOSE: To provide a nitride semiconductor element which has high electrode contact properties. CONSTITUTION: This nitride semiconductor element, which includes a semiconductor layer consisting of a III-nitride semiconductor and a metal electrode for supplying this with carriers, has the first contact layer consisting of a III-nitride semiconductor (AlxGa1-x)1-yInyN (0<=x<=1, 0<y<=1) which is stacked between the semiconductor layer and the metal electrode, and the second contact layer, consisting of a III-nitride semiconductor Alx'Ga1-x'N (0<=x'<=1) which is stacked between the first contact layer and the metal electrode.
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