摘要 |
Method can be used in vacuum deposition, electro-deposition and cathode sputtering and involves the vapourisation of vanadium pentoxide at 650-700 degrees C under a pressure of similar to 10-5 mm.Hg. A thin film is condensed on the substrate and this is heated in the presence of an appropriate stoichiometric amount of vanadium sesquioxide at 450-550 degrees C and 10-2 mm.Hg. |