| 摘要 |
<p>Computer programs and computer-implemented methods for predicting from first principles the behavior of dopants and defects in the processing of electronic materials. The distribution of dopant and defect components in a substrate lattice is predicted based on external conditions and fundamental data for a set of microscopic processes that can occur during material processing operations. The concentration behavior of one or more fast components is calculated in two stages, by solving a first relationship for a time period before the fast component reaches a pseudo steady state at which the concentration of the fast component is determined by concentration of one or more second components, and by solving a second relationship for a time period after the first component reaches the pseudo steady state. Application of these methods to modeling ultrashallow junction processing is also described.</p> |
