发明名称 VAPOR DEPOSITION OF OXIDES, SILICATES AND PHOSPHATES
摘要 Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300 DEG C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250 DEG C. supplying the vapors in alternating pulse produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
申请公布号 WO0227063(A3) 申请公布日期 2002.10.10
申请号 WO2001US30507 申请日期 2001.09.28
申请人 PRESIDENT AND FELLOWS OF HARWARD COLLEGE;GORDON, ROY, G.;BECKER, JILL;HAUSMANN, DENNIS;SUH, SEIGI 发明人 GORDON, ROY, G.;BECKER, JILL;HAUSMANN, DENNIS;SUH, SEIGI
分类号 C23C16/42;C07F9/09;C07F9/11;C23C16/40;C23C16/44;C23C16/455;H01L21/314;H01L21/316 主分类号 C23C16/42
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