| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor substrate which is formed by laminating an epitaxial layer of a compound semiconductor different from a single crystal substrate on this substrate and is capable of improving the stable operation and characteristics of various semiconductor devices by more effectively relieving the structural distortion in the compound semiconductor substrate. SOLUTION: This compound semiconductor substrate is formed with an epitaxial layer consisting of the compound semiconductor having a lattice constant greater than the lattice constant of the single crystal on the single crystal substrate. The compound semiconductor substrate described above is formed by interposing a buffer layer which consists of material having the elastic shearing constant smaller than the elastic shearing constant of the compound semiconductor and has the thickness within three molecular layers or the thickness within the critical layer thickness between the single crystal substrate and the epitaxial layer.
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