发明名称 |
METHOD OF USING TITANIUM DOPED ALUMINUM OXIDE FOR PASSIVATION OF FERROELECTRIC MATERIALS AND APPARATUS USING THE SAME |
摘要 |
<p>PURPOSE: Apparatus of using a titanium-doped aluminum oxide for passivation of ferroelectric materials is provided to reduce stress and improve passivation properties by forming a passivation layer including a titanium-doped aluminum oxide layer for passivation of ferroelectric materials such as Pt/SBt/Ir-Ta-O devices. CONSTITUTION: A ferroelectric material is positioned between the first metal electrode and the second metal electrode. The passivation layer is located on the first metal electrode, including the titanium-doped aluminum oxide. The passivation layer has a thickness of at least 200 angstrom. The first metal electrode is platinum and the ferroelectric material includes strontium-bismuth-tantalate(SBT).</p> |
申请公布号 |
KR20020075740(A) |
申请公布日期 |
2002.10.05 |
申请号 |
KR20020016747 |
申请日期 |
2002.03.27 |
申请人 |
SHARP CORPORATION |
发明人 |
HSU SHENG TENG;YING HONG;ZHANG FENG YAN |
分类号 |
G02F1/03;H01L21/00;H01L21/02;H01L21/316;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/04;H01L27/105;H01L27/108;H01L29/788;H01L29/792;H01L37/02;H01L41/09;H01L41/22;(IPC1-7):H01L27/105 |
主分类号 |
G02F1/03 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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