| 摘要 |
PROBLEM TO BE SOLVED: To prevent a short circuit of a SAC plug electrode in forming a plurality of elements having different heights in the same substrate plane. SOLUTION: The semiconductor device comprises a semiconductor substrate wherein a first region and a second region are defined in a main plain, a first substrate film formed on the second region, a first stacked structure wherein a conduction film and an insulation film are stacked in turns from the substrate side, and a second stacked structure wherein a conduction film and an insulation film are stacked in turns from the substrate side, the insulation film of the first stacked structure and the insulation film of the second stacked structure are made of the same material, and a height from the main surface of the substrate to the top surface of the second stacked structure is equal to or higher than that from the main surface of the semiconductor substrate to the top surface of the first stacked structure. |
