MULTI-LAYER STRUCTURE SEMICONDUCTOR, DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an MIS type field effect transistor small in the effective area of the device, small in on-resistance during operation and capable of large current operation in high voltage resistance. SOLUTION: One or a plurality of field effect transistors are layered in the thickness direction of a multi-layer film for a basic unit planarly juxtaposing and arranging one or the plurality of the field effect transistors forming a gate electrode, a source electrode and a drain electrode on the surface of the semiconductor multi-layer film, and the gate electrode, the source electrode and the drain electrode of each field effect transistor are connected respectively.