| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emitting type semiconductor laser, capable of obtaining a large light output for the same input by confining the light in a resonator by not only reflecting the light on upper and lower surfaces but also reflecting as much light as possible at a side face and a method for manufacturing the same. SOLUTION: The surface emitting type semiconductor laser comprises a lower multilayer reflecting film (DBR) 2 provided on a semiconductor substrate 1, a double hetero structure laminated part 6 which is provided on the film and which has an active layer 4 having a small band gap and interposed between semiconductor layers (spacer layers) 3 and 5 each having a larger band gap than that of the layer 4, and an upper multilayer reflecting film 7 provided on the laminated part 6. In this laser, a predetermined region A of the part 6 is formed as a current injection region, oscillated in the region A, its outer periphery is insulated to an insulating region 9, and formed as a layer containing a metal oxide 8 of a metal for constituting the part 6 on the region. A coherent light beam is emitted from the upper surface side of the film 7.
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