| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element where the gate-source capacitance of a FET acting like a main switch element can be short-circuited with a low impedance. SOLUTION: The semiconductor element includes a 1st FET Q10, a 2nd FET Q20 and one package. The 1st FET Q110 and the 2nd FET Q20 exist in the package 1. The 1st FET Q10 configures the main switch element. The drain D2 and the source S2 of the 2nd FET Q20 are connected to the gate G1 and the source S1 of the 1st FET Q10. The package 1 is provided with outside terminals for the 1st and 2nd FETs Q10, 20.
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