| 摘要 |
The present invention provides a high-frequency switch comprising: a high-frequency circuit board 12 including an MIC substrate 16, a microstrip line 24 disposed on a front surface of the MIC substrate 16, and a signal wiring layer 26 and a front surface grounding conductor (I) 20a disposed along the microstrip line 24; a plurality of bumps 28 disposed on the microstrip line 24, the signal wiring layer 26, and the front surface grounding conductor (I) 20a; and a semiconductor chip 14 disposed on the high-frequency circuit board 12 through the plurality of bumps 28; wherein a gate electrode of a transistor of the semiconductor chip 14 is connected to the signal wiring layer 26 of the high-frequency circuit board 12 through one or more of the plurality of bumps 28; a source electrode is connected to the front surface grounding conductor (I) 20a through one or more of the plurality of bumps 28; and a drain electrode is connected to the microstrip line 24 through one or more of the plurality of bumps 28.
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