| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent counter diffusion from developing between electrode pads and lead parts of metallic resistive layers even when the metallic resistive layers are heat-treated. SOLUTION: An under insulation film 3 is formed on a semiconductor substrate 2. A conductive film 4 is formed on the film 3. The film 4 is etched to form a heating resistor 5, a resistor 6 for flow detection, resistors 7 and 8 for fluid temperature detection, and the lead parts 9 to 14 of these resistors. An upper insulation film 15 is formed on the resistors 5 to 8 and lead parts 9 to 14. The film 15 is etched at portions where the electrode pads are to be formed. The electrode pads 16 to 21 are formed on the lead parts 9 to 14. A hollow part 2a is formed in the substrate 2 to form a diaphragm 22. The resistors 5 and 6 are heat-treated by irradiating the diaphragm 22 with light, with the pads 16 to 21 covered by a heat-shield material.</p> |
