发明名称 |
Multi-thickness silicide device formed by disposable spacers |
摘要 |
A transistor device formed on a semiconductor-on-insulator (SOI) substrate with a buried oxide (BOX) layer disposed thereon and an active layer disposed on the BOX layer having active regions defined by isolation trenches. The device includes a gate defining a channel interposed between a source and a drain formed within the active region of the SOI substrate. Further, the device includes a plurality of thin silicide layers formed on the source and the drain. Additionally, at least an upper silicide layer of the plurality of thin silicide layers extends beyond a lower silicide layer. Further still, the device includes a disposable spacer used in the formation of the device. The device further includes a second plurality of thin silicide layers formed on a polysilicon electrode of the gate.
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申请公布号 |
US2002142524(A1) |
申请公布日期 |
2002.10.03 |
申请号 |
US20010824123 |
申请日期 |
2001.04.02 |
申请人 |
EN WILLIAM G.;KRISHNAN SRINATH;JU DONG-HYUK;YU BIN |
发明人 |
EN WILLIAM G.;KRISHNAN SRINATH;JU DONG-HYUK;YU BIN |
分类号 |
H01L21/285;H01L21/336;H01L21/8234;H01L29/417;H01L29/45;H01L29/786;(IPC1-7):H01L21/00;H01L21/84;H01L21/823;H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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