发明名称 Verfahren zum gleichzeitigen maschinellen Laeppen und/oder Polieren mehrerer scheibenfoermiger Halbleiterkristalle
摘要 1,170,897. Abrading. SIEMENS A.G. 1 March, 1968 [3 March, 1967], No. 10004/68. Heading B3D. A process for lapping and/or polishing a plurality of plate-shaped semi-conductor crystals comprises sticking the plates 5 to a carrier 6 in such a way that their flat surfaces to be worked are all in a single plane, bringing and holding the plates in contact with the surface of a lapping and/or polishing tool in such a way that at and from the moment of first contact the working surface of the tool coincides with the plane of the surface of the plates to be worked, and moving the carrier relative to the operating surface of the tool. For mounting the plates on the carrier, a ring 1 is provided having a number of columns 2, the upper surfaces of which are in a common plane and each of which have a ring of suction holes or a single annular suction gap whereby the plates can be held one to each column with the surfaces to be lapped engaging the upper surfaces of the columns, the plates being initially positioned by being placed in recesses 5 in a template 4, the recesses corresponding to the columns. When the plates are held by suction on the columns, adhesive, such as beeswax, is placed on the upper surfaces of the plates and the carrier 6, which has been heated, engaged with the plates. Upon cooling of the carrier, the suction is switched off so that the carrier now holds the plates with the surfaces to be lapped in a common plane. The carrier plate is then applied to the lapping or polishing tool so that at the first moment of contact, the working surface coincides with the plane of the surfaces to be worked.
申请公布号 DE1652170(A1) 申请公布日期 1971.02.25
申请号 DE19671652170 申请日期 1967.03.03
申请人 SIEMENS AG 发明人 LANGE,HERBERT,DR.
分类号 B24B37/27;H01L21/00;H01L21/302;H01L21/673 主分类号 B24B37/27
代理机构 代理人
主权项
地址