| 发明名称 |
Nitride field effect transistor |
| 摘要 |
<p>A semiconductor device includes an AlGaN (104) film formed on a GaN film (103) on a substrate (101), a gate electrode (106) formed on the AlGaN film (104), and source and drain electrodes (107,108) formed on either side of the gate electrode (106) on the AlGaN film (104). An n-type InxGayAl1-x-yN film (105) is interposed between the source and drain electrodes (107,108) and the AlGaN film (104). Alternatively, the semiconductor device includes an n-type InxGayAl1-x-yN film formed on a GaN film on a substrate, a gate electrode formed on the InxGayAl1-x-yN film, and source and drain electrodes formed on either side of the gate electrode on the InxGayAl1-x-yN film. <IMAGE></p> |
| 申请公布号 |
EP1246256(A2) |
申请公布日期 |
2002.10.02 |
| 申请号 |
EP20020005656 |
申请日期 |
2002.03.12 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
INOUE, KAORU;IKEDA, YOSHITO;MASATO, HIROYUKI |
| 分类号 |
H01L21/205;H01L21/338;H01L29/20;H01L29/778;H01L29/812;(IPC1-7):H01L29/778 |
主分类号 |
H01L21/205 |
| 代理机构 |
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