发明名称 |
SEMICONDUCTOR LASER DEVICE |
摘要 |
The semiconductor laser device the n-InP cladding layer, SCH-MQW active layer, p-InP cladding layer, and p-GaInAsP optical waveguide layer are respectively formed into a tapered shape on the n-InP substrate . The combination of oscillation parameters of the tapered shape, the grating pitch of a diffraction grating, an optical waveguide including an active layer, and the length of a resonator are adjusted so that laser beam including two or more oscillating longitudinal modes are output.
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申请公布号 |
CA2355429(A1) |
申请公布日期 |
2002.10.02 |
申请号 |
CA20012355429 |
申请日期 |
2001.08.16 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
FUNABASHI, MASAKI;IWAI, NORIHIRO |
分类号 |
H01S5/028;H01S5/10;H01S5/12;H01S5/22;H01S5/227;H01S5/34;(IPC1-7):H01S5/22;H01S5/30 |
主分类号 |
H01S5/028 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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