发明名称 |
Semiconductor circuit device having active and standby states |
摘要 |
A P channel MOS transistor and an N channel MOS transistor turned on/off in response to an input signal in an active state as well as an N channel MOS transistor connected between an output node and the N channel MOS transistor and turned on/off in response to a control signal are provided. The input signal is at the L level in a standby state. The control signal is at the L level in the standby state and at the H level in the active state. This suppresses the effect of hot carriers in the active state and decreases a subthreshold current in the standby state.
|
申请公布号 |
US6459301(B2) |
申请公布日期 |
2002.10.01 |
申请号 |
US19980167985 |
申请日期 |
1998.10.08 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIDAKA HIDETO |
分类号 |
G11C11/41;G11C5/14;G11C8/08;G11C8/12;G11C8/18;G11C11/401;G11C11/406;G11C11/407;H03K19/00;(IPC1-7):H03K19/018 |
主分类号 |
G11C11/41 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|