发明名称 Semiconductor circuit device having active and standby states
摘要 A P channel MOS transistor and an N channel MOS transistor turned on/off in response to an input signal in an active state as well as an N channel MOS transistor connected between an output node and the N channel MOS transistor and turned on/off in response to a control signal are provided. The input signal is at the L level in a standby state. The control signal is at the L level in the standby state and at the H level in the active state. This suppresses the effect of hot carriers in the active state and decreases a subthreshold current in the standby state.
申请公布号 US6459301(B2) 申请公布日期 2002.10.01
申请号 US19980167985 申请日期 1998.10.08
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 HIDAKA HIDETO
分类号 G11C11/41;G11C5/14;G11C8/08;G11C8/12;G11C8/18;G11C11/401;G11C11/406;G11C11/407;H03K19/00;(IPC1-7):H03K19/018 主分类号 G11C11/41
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