| 摘要 |
A nitride semiconductor laser device of high reliability such that the width of contact between a p-side ohmic electrode and a p-type contact layer is precisely controlled. The device comprises a substrate, an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer. All the layers are formed in order on the substrate. A ridge part including the uppermost layer of the p-type nitride semiconductor layer of the p-type nitride semiconductor layer i.e., a p-type contact layer is formed in the p-type nitride semiconductor layer. Ap-side ohmic electrode is formed on the p-type contact layer of the top of the ridge part. A first insulating film having an opening over the top of the ridge part covers the side of the ridge part and the portion near the side of the ridge part. The p-side ohmic electrode is in contact with the p-type contact layer through the opening. A second insulating film is formed on the first insulating film. <IMAGE> |
