发明名称 SUBSTRATE TREATMENT APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To effectively use a vertical CVD apparatus by a method where the inflow of a reaction gas into a rotating mechanism from a reaction chamber can be prevented effectively, even if the gas is not injected from the central side of a rotation. SOLUTION: In the vertical CVD apparatus, while the reaction gas is being introduced into the reaction chamber 25, the reaction chamber is evacuated, and a wafer is treated, while it is being turned by the shaft 41 of the rotating mechanism 40. A sealing part 50 of a labyrinth structure, which is composed of a rotator 51 and a stator 52, is installed between the shaft 41 of the apparatus and a furnace port lid 32 as the non-rotational part of the reaction chamber 25, into which the shaft 41 is inserted. The inflow of the reaction gas into the rotating mechanism 40 from the reaction chamber 25 via a gap 54 is prevented. The upper opening 53 of the gap 54, communicating with the side of the reaction chamber 25, is arranged on the side of the shaft 41 from the opposite side of the shaft separated from the shaft 41, and the upper opening diameter R of the gap 54 around the shaft 41 is made small.
申请公布号 JP2002280374(A) 申请公布日期 2002.09.27
申请号 JP20010079056 申请日期 2001.03.19
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TOMEZUKA KOJI
分类号 F16J15/447;C23C16/44;C23C16/458;H01L21/00;H01L21/31;H01L21/469;(IPC1-7):H01L21/31 主分类号 F16J15/447
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