| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a cerium oxide polishing agent and a method of polishing substrate for highly planarizing the overall part of the surface to be polished of a semiconductor substrate which includes uneven surfaces resulting from wiring pattern. SOLUTION: The cerium oxide polishing agent is formed by dispersing cerium oxide particles, acrylic acid ester derivative and dispersing agent, consisting of polyacrylic acid into water, and planarization of surface has been realized with a method of polishing the substrate by using the same cerium oxide polishing agent.</p> |
