发明名称 |
Semiconductor photodetector, semiconductor photo receiver and semiconductor device |
摘要 |
An ultrahigh speed, high sensitivity photodetector, optical module and/or optical transmission device made by reducing the size of a surface illuminated type photodetector to decrease capacitance C. The effective detecting area on a side of the substrate that is opposite to a light incidence side of the substrate in a surface illuminated type photodetector and that is reached by the incident light passing through the semiconductor includes a plurality of ohmic contact areas and a reflector. The reflector may be a laminate comprised of two films in contact with the semiconductor including a transparent film (lower) and a metal film (upper). The size of the ohmic contacts may be small when compared to the wavelength of light incident on the surface of the photodetector. The photodetector may be used in ultrahigh speed, high sensitivity optical modules, semiconductor photo receivers and optical transmission devices with increased transmission capacities.
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申请公布号 |
US2002135036(A1) |
申请公布日期 |
2002.09.26 |
申请号 |
US20010905956 |
申请日期 |
2001.07.17 |
申请人 |
HITACHI, LTD. |
发明人 |
TERANO AKIHISA;MATSUOKA YASUNOBU;TANAKA SHIGEHISA |
分类号 |
G02B6/42;H01L27/14;H01L31/00;H01L31/0224;H01L31/0232;H01L31/0352;H01L31/075;H01L31/10;H01L31/105;H01L31/117;H01L31/12;(IPC1-7):H01L31/075 |
主分类号 |
G02B6/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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