SEMICONDUCTOR DEVICE FOR ESD PROTECTION

摘要

A semiconductor device for ESD protection is provided. The semiconductor device includes a plurality of transistors having a multi-fingered structure, a plurality of multilayer interconnections separated from one another, formed in proportion to the number of common drain regions of the transistors, and connected to the common drain regions of each of the transistors; a pad conductive layer formed on the multilayer interconnections; and a plurality of contact plugs for connecting interconnections of the multilayer interconnections to one another and for connecting the multilayer interconnections to the pad conductive layer so that a current flowing in the common drain regions of the transistors may pass only through the multilayer interconnections connected to the common drain regions and may flow into the pad conductive layer. Parasitic bipolar transistors of all MOSFETs having the multi-fingered structure are turned on, thereby flowing a high current during an ESD event.