| 摘要 |
A dual tunnel junction sensor operates without the requirement of first and second shield layers. This is accomplished by making first and second free layer structures antiparallel (AP) coupled structures. The first free layer structure has first and second AP coupled layers and the second free layer structure has third and fourth AP coupled layers. The thicknesses of the first and third AP coupled layers, which are preferably equal, are different from the thicknesses of the second and fourth AP coupled layers, which are also preferably equal. Field signals from perpendicular or longitudinally recorded magnetic disks rotate the magnetic moments of the first and second free layer structures so that resistances on each side of a pinning layer are additive. Extraneous field signals, other than signal fields from the rotating magnetic disk, are cancelled by common mode rejection.
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