发明名称 Nonvolatile memory system, semiconductor memory, and writing method
摘要 A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.
申请公布号 US2002136056(A1) 申请公布日期 2002.09.26
申请号 US20020095565 申请日期 2002.03.13
申请人 发明人 ISHII TATSUYA;MIWA HITOSHI;TSUCHIYA OSAMU;KUBONO SHOOJI
分类号 G11C16/02;G11C7/00;G11C11/34;G11C16/04;G11C16/10;(IPC1-7):G11C11/34 主分类号 G11C16/02
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